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N-CHANNEL 30V - 0.0026 - 160A D2PAK STripFETTM II POWER MOSFET
TYPE ST160NF3LL
s s s s s s
STB160NF3LL
PRELIMINARY DATA
VDSS 30 V
RDS(on) <0.003
ID 160 A
TYPICAL RDS(on) = 0.0026 LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE LOGIC LEVEL DEVICE 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")
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D2PAK TO-263 (Suffix "T4")
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID() ID IDM(*) Ptot EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Value 30 30 15 160 160 640 300 2 1.2 -55 to 175
(1) Starting Tj = 25 oC, ID = 80A, VDD = 20V
Unit V V V A A A W W/C J C
Drain Current (continuous) at TC = 25C
Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
(*) Pulse width limited by safe operating area. (*) Current Limited by Package
May 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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STB160NF3LL
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 0.5 62.5 300 C/W C/W C
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A VGS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA
VDS = Max Rating VDS = Max Rating TC = 125C VGS = 15 V
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 4.5 V ID = 250 A ID = 80 A ID = 80 A Min. 1 0.0026 0.0032 0.0030 0.0043 Typ. Max. Unit V
DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions
VDS = 15 V ID =80 A
Min.
Typ. 60 6200 1720 300
Max.
Unit S pF pF pF
VDS = 25V f = 1 MHz VGS = 0
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STB160NF3LL
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON (*)
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 80 A VDD = 15 V VGS = 4.5 V RG = 4.7 (Resistive Load, Figure 3) VDD=24V ID=160A VGS=5V Min. Typ. 50 350 95 25 45 125 Max. Unit ns ns nC nC nC
SWITCHING OFF(*)
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 80 A VDD = 15 V VGS = 4.5 V RG = 4.7, (Resistive Load, Figure 3) Min. Typ. 150 120 Max. Unit ns ns
SOURCE DRAIN DIODE(*)
Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 160 A VGS = 0 90 200 5 Test Conditions Min. Typ. Max. 160 640 1.3 Unit A A V ns nC A
ISD = 160 A di/dt = 100A/s Tj = 150C VDD = 15 V (see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by Tjmax
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STB160NF3LL
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STB160NF3LL D2PAK MECHANICAL DATA
DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 0 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.015 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181
0.106
0.009 0.037 0.067 0.024 0.054 0.368
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STB160NF3LL
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 BASE QTY 1000 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 MIN. inch MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082
* on sales type
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STB160NF3LL
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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